H. Amekura et al., In situ photodetection in strong radiation fields: Simultaneous irradiation of Si by photons and high-energy protons, J APPL PHYS, 88(5), 2000, pp. 2497-2502
Photoconductivity (PC) of crystalline Si induced by similar to 1 eV photon
irradiation has been studied under simultaneous 17 MeV proton irradiation.
The PC during simultaneous irradiation is suppressed to 20%-50% of the valu
e without the proton irradiation. The PC-suppression rate depends on the ph
oton energy, the proton flux, and the defect concentration. These dependenc
es are explained with a saturated variation of conductivity increment Delta
sigma during the proton irradiation. The saturation is mainly ascribed to
bimolecular-type recombination of excess carriers under high-density excita
tion. The understanding of the PC-suppression process contributes to the de
velopment of photodetectors for use in strong radiation fields. Guidelines
to limit the effect of the PC suppression are also discussed. (C) 2000 Amer
ican Institute of Physics. [S0021-8979(00)01617-0].