Hall constant in quantum-sized semimetal Bi films: Electric field effect influence

We report on the influence of a gate voltage on the Hall constant [electric field effect Hall constant (EFE-HC)] in a quantum-sized Bi film. The depen dence of EFE-HC on the applied electric field, film thickness, and temperat ure was measured. The electric field effect induces a change of several ten s of percent in the Hall constant under an applied electric field of 10(8) V/m. The effect depends on the film thickness in an oscillatory manner simi lar to that observed in other quantum-size characteristics. We present an i nterpretation of the known temperature maximum of HC in quantum size Bi fil ms in absence of EFE, by considering the temperature dependence of the elec tron and hole mobilities. (C) 2000 American Institute of Physics. [S0021-89 79(00)02718-3].