Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range

We present a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb) layers grown pseudomorphically on a G aAs substrate by all-solid-source molecular beam epitaxy. The band gap of t he QW is determined by the thickness and composition of both types of layer s and can be varied from 1.1 to 1.55 mu m. Calculations show that the obser ved strong room-temperature photoluminescence in this wavelength range can be explained by a type-II transition in the QW. Structural investigations b y reflection high-energy electron diffraction, transmission electron micros copy, and secondary ion mass spectroscopy confirm a triple layer structure with laterally modulated composition. Photoluminescence measurements reveal a linewidth of 50 meV at 1.3 mu m and a luminescence decay time of 240 ps. Our investigations demonstrate the feasibility of this materials system fo r vertical cavity surface-emitting lasers and other optoelectronic devices on GaAs. (C) 2000 American Institute of Physics. [S0021-8979(00)03917-7].