Negative-effective-mass ballistic field-effect transistor: Theory and modeling (vol 87, pg 7466, 2000)

Authors
Gribnikov, ZS Vagidov, NZ Korshak, AN Mitin, VV
Citation
Zs. Gribnikov et al., Negative-effective-mass ballistic field-effect transistor: Theory and modeling (vol 87, pg 7466, 2000), J APPL PHYS, 88(5), 2000, pp. 3105-3105
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
5
Year of publication
2000
Pages
3105 - 3105
Database
ISI
SICI code
0021-8979(20000901)88:5<3105:NBFTTA>2.0.ZU;2-P