Electron-beam induced degradation in CdTe photovoltaics

Citation
R. Harju et al., Electron-beam induced degradation in CdTe photovoltaics, J APPL PHYS, 88(4), 2000, pp. 1794-1801
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
4
Year of publication
2000
Pages
1794 - 1801
Database
ISI
SICI code
0021-8979(20000815)88:4<1794:EIDICP>2.0.ZU;2-S
Abstract
We used electron beam induced current (EBIC) to measure degradation of CdTe photovoltaic cells. We have observed that: (i) the EBIC signal shows a con siderable, continuous degradation depending on the electron-beam current, s can area, energy, and sample treatment; (ii) the characteristic degradation time fluctuates between different spots on the same sample; and (iii) grai n boundary regions are the most effective collectors of the electron-beam g enerated charge carriers. Our phenomenological model relates the observed d egradation to defects caused by the electron-beam generated electrons and h oles. (C) 2000 American Institute of Physics. [S0021-8979(00)04416-9].