We have determined the complex dielectric tensor components of the chalcopy
rite semiconductor CuAlSe2 in the energy range between 1.4 and 5.2 eV, at r
oom temperature, using spectroscopic ellipsometry. We present results obtai
ned on two single crystals grown by the traveling-heater method using In so
lvent. Values of refractive indices n, extinction coefficients k and normal
-incidence reflectivity R in the two independent polarizations are reported
. The structures observed in the energy region studied are analyzed by fitt
ing the second-derivative spectra d(2)epsilon(omega)/d omega(2) to analytic
critical-point line shapes. The obtained energies are assigned to certain
electronic interband transitions by comparison with existing band structure
calculations. (C) 2000 American Institute of Physics. [S0021-8979(00)04516
-3].