Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots

We investigate the optical and electrical properties of n-i-n GaAs/(AlGa)As double barrier resonant tunneling diodes (RTDs) in which a layer of InAs s elf-assembled quantum dots (QDs) is embedded in the center of the GaAs quan tum well. A combination of photoluminescence (PL) and electrical measuremen ts indicates that the electronic states and charge distribution in this typ e of RTD are strongly affected by the presence of the dots. Also, the dot P L properties depend strongly on bias, being affected by tunneling of majori ty (electrons) and minority (photocreated holes) carriers through the well. The measurements demonstrate nonlinear effects in the QD PL by means of re sonant tunneling and the possibility of using the dot PL as a probe of carr ier dynamics in RTDs. (C) 2000 American Institute of Physics. [S0021-8979(0 0)05916-8].