Schottky barrier height of MnSb(0001)/GaAs(111)B contacts: Influence of interface structure

The Schottky barrier height (SBH) of MnSb(0001)/n-GaAs(111)B diodes was inv estigated in terms of current-voltage characteristics for three different G aAs surfaces, GaAs (root 19x root 19), GaAs (2x2), and sulfur passivated Ga As. We observed that the SBH and the ideality factor changed significantly depending on the GaAs surface structure prepared before the MnSb growth. Th e sulfur passivated sample was superior to the others in that it has a lowe r ideality factor and higher barrier. The SBH fell off linearly with increa sing ideality factor n. The SBH of MnSb(0001)/n-GaAs(111)B was estimated to be 0.94 eV by extrapolating the linear relationship to n=1. (C) 2000 Ameri can Institute of Physics. [S0021-8979(00)02916-9].