Wb. Wu et al., Epitaxial Pb(Zr0.52Ti0.48)O-3/La0.35Nd0.35Sr0.3MnO3 heterostructures for fabrication of ferroelectric field-effect transistor, J APPL PHYS, 88(4), 2000, pp. 2068-2071
Epitaxial La0.35Nd0.35Sr0.3MnO3 (LNSMO) thin films and Pb(Zr0.52Ti0.48)O-3(
PZT)/LNSMO heterostructures have been grown on LaAlO3 (001) substrates by t
he pulsed laser deposition method. The oxygen concentration in the LNSMO fi
lms is quite sensitive to the deposition oxygen pressure and can be control
led during the fabrication process. It is, however, stable against in situ
postdeposition thermal treatments. Consequently, the resistivity and the me
tal-semiconductor transition temperature of the LNSMO films can be tuned an
d fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO fer
roelectric capacitor show a remnant polarization of similar to 35 mu C/cm(2
) and a coercive field of 30-40 kV/cm at low driving voltages. Switching en
durance tests suggest no polarization loss up to about 10(10) bipolar switc
hing cycles. The advantages of using epitaxial LNSMO films as the semicondu
cting channel in an all-perovskite ferroelectric field-effect transistor ar
e discussed. (C) 2000 American Institute of Physics. [S0021- 8979(00)04616-
8].