Epitaxial Pb(Zr0.52Ti0.48)O-3/La0.35Nd0.35Sr0.3MnO3 heterostructures for fabrication of ferroelectric field-effect transistor

Epitaxial La0.35Nd0.35Sr0.3MnO3 (LNSMO) thin films and Pb(Zr0.52Ti0.48)O-3( PZT)/LNSMO heterostructures have been grown on LaAlO3 (001) substrates by t he pulsed laser deposition method. The oxygen concentration in the LNSMO fi lms is quite sensitive to the deposition oxygen pressure and can be control led during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the me tal-semiconductor transition temperature of the LNSMO films can be tuned an d fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO fer roelectric capacitor show a remnant polarization of similar to 35 mu C/cm(2 ) and a coercive field of 30-40 kV/cm at low driving voltages. Switching en durance tests suggest no polarization loss up to about 10(10) bipolar switc hing cycles. The advantages of using epitaxial LNSMO films as the semicondu cting channel in an all-perovskite ferroelectric field-effect transistor ar e discussed. (C) 2000 American Institute of Physics. [S0021- 8979(00)04616- 8].