Defect structure of SiNx : H films and its evolution with annealing temperature

Citation
Fl. Martinez et al., Defect structure of SiNx : H films and its evolution with annealing temperature, J APPL PHYS, 88(4), 2000, pp. 2149-2151
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
4
Year of publication
2000
Pages
2149 - 2151
Database
ISI
SICI code
0021-8979(20000815)88:4<2149:DSOS:H>2.0.ZU;2-8
Abstract
The structure of defects of SiNx:H films is investigated by electron-spin r esonance. It is found that a relaxation process takes place at annealing te mperatures below 600 degrees C for those compositions in which the nitrogen -to-silicon ratio is above the percolation threshold of the Si-Si bonds in the nitride lattice. The nature of this process is discussed and attributed to a thermally activated charge transfer between metastable defects. No su ch relaxation occurs in the films with a composition below the percolation threshold, possibly due to a positive correlation energy and a structural l ack of flexibility. For higher annealing temperatures, an increase of the d efect density is observed and associated with the thermal release of hydrog en. (C) 2000 American Institute of Physics. [S0021-8979(00)00516-8].