The energy gap of pristine silicon clusters

Citation
B. Marsen et al., The energy gap of pristine silicon clusters, J ELEC SPEC, 109(1-2), 2000, pp. 157-168
Citations number
116
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
109
Issue
1-2
Year of publication
2000
Pages
157 - 168
Database
ISI
SICI code
0368-2048(200008)109:1-2<157:TEGOPS>2.0.ZU;2-Q
Abstract
Studies of the fundamental energy gap of pristine silicon clusters have bee n performed using STM and STS. Clusters with sizes between 2.5 and 40 Angst rom are studied. The size dependence of the gap is determined. For particle s below 15 Angstrom, gaps up to 450 meV are found. Larger particles exhibit zero gaps. The results are explained in terms of a transformation from dia mond to compact structure occurring at 15 Angstrom (similar to 44 atoms per cluster). For clusters with diamond structure the surface dangling bond de nsity is high leading to electronic states filling the energy gap. On the o ther hand, the compact arrangement of the smaller clusters tends to elimina te dangling bonds. Therefore, finite-gap values are observed for clusters w ith less than similar to 44 atoms. (C) 2000 Elsevier Science B.V. All right s reserved.