Photosensitization of thin SnO2 nanocrystalline semiconductor film electrodes with metallodiporphyrin

Citation
F. Fungo et al., Photosensitization of thin SnO2 nanocrystalline semiconductor film electrodes with metallodiporphyrin, J PHYS CH B, 104(32), 2000, pp. 7644-7651
Citations number
60
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
104
Issue
32
Year of publication
2000
Pages
7644 - 7651
Database
ISI
SICI code
1520-6106(20000817)104:32<7644:POTSNS>2.0.ZU;2-R
Abstract
Sensitized photocurrent generation is observed with a porphyrin dyad (P-Zn- P) and its structural moieties: 5-(4-carboxyphenyl)-10,15,20-tris(4-methylp henyl) porphyrin (P) and Zn(II) 5-(4-carboxyphenyl)-10,15,20-tris(4-methylp henyl) porphyrin (P-Zn). The dyes were adsorbed to saturation on a nanocrys talline SnO2 thin film, employed as working electrode in a photoelectrochem ical cell. The metallized and unmetallized moieties possess different singl et state energies and redox properties. In both, solution and adsorbed stat e, nearly complete singlet-singlet energy transfer from the P-Zn to P has b een determined in the dyad. P-Zn is less efficient than P in the photocurre nt generation, but is a suitable energy donor in the dyad molecule. The gen eration of photoelectrical effects by the dyad is less effective in compari son with P. Considering the oxidation potentials of the two moieties in P-Z n-P, a mechanism is proposed where the oxidized metallized porphyrin enhanc es the back electron-transfer process.