Cubic silicon carbide (3C-SiC) nanowires were synthesized through a reducti
on-carburization route by using silicon powders and tetrachloride (CCl4) as
Si and C sources, and metallic Na as the reductant at 700 degrees C. The a
s-prepared SiC nanowires were characterized and studied by X-ray powder dif
fraction, transmission electron microscopy, X-ray photoelectron spectra, Ra
man backscattering, and photoluminescence spectra at room temperature. The
SiC nanowires produced from the present route typically have diameters of 1
5-20 nm and lengths of 5-10 mu m. The influencing factors of the formation
of the SiC nanowires were discussed and a possible growth mechanism for the
SiC nanowires was proposed.