Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography

AlxGa1-xAs epitaxic layers, with x = 0.43 and GaAs single crystals implante d with various doses of high-energy Se and Si ions, and silicon single crys tals implanted with high-energy light ions were studied by means of differe nt X-ray diffraction methods employing either a strongly limited white beam or a highly collimated monochromatic beam. The methods provided complement ary characterization of lattice parameter changes and lattice deformation i n the implanted layers. The synchrotron rocking curves recorded with a smal l-diameter beam provided a very good separation of interference maxima and enabled determination of the strain profile. A characteristic difference in strain depth distributions between the implanted A(III)B(V) compounds and silicon was noticed. Ion implantation in A(III)B(V) compounds produced a re latively thick layer with an almost constant and distinctly increased latti ce parameter in regions close to the surface, whereas, in the case of silic on, shot-through layers with almost unchanged lattice spacing were observed . Other important information obtained from the synchrotron micro-Laue patt ern was that the interference fringes caused by crystal curvature or strain gradient are located in the plane of diffraction, while parts of the Laue spot corresponding to the deformed regions are usually displaced.