Naphthalenetetracarboxylic diimide-based n-channel transistor semiconductors: Structural variation and thiol-enhanced gold contacts

The synthesis and field-effect transistor (FET) electron mobility of ten N- substituted naphthalene 1,4,5,8-tetracarboxylic diimide (NTCDI) derivatives deposited at ambient and elevated temperatures are reported. Mobilities >0 .01 cm(2)/(V s) were measured in air for three NTCDIs with partially fluori nated substituents, and >0.001 cm(2)/V s) for a hydroxy-terminated compound . Mobilities 0.001-0.1 cm(2)/(V s) were also found for three n-alkyl NTCDIs , but only under vacuum; FET operation with gold bottom contacts was enable d by specific thiol coatings of the contacts. The highest mobility in air, >0.1 cm(2)/(V s), was conferred by 4-trifluoromethylbenzyl substitution, wh ile 1H,1H-perfluorooctyl substitution resulted in an on/off ratio in air 10 (5). Solution electrochemistry and solid-state X-ray and electron diffracti on were employed to partially explain the results, and applications of the materials to complementary circuits. are considered.