Effects of oxygen partial pressure and laser energy density on the heteroepitaxial growth of YSZ on Si(001) by pulsed laser deposition

Yttria-stabilized zirconia (YSZ) was deposited on hydrogen-terminated Si(00 1) by pulsed laser deposition (PLD) under various oxygen pressures (about 2 -2 x 10(-4) Pa) and laser energy densities (0.87-1.09 J/cm(2)) at 800 degre es C. The effects of O-2 pressure and laser energy density were found to be important to the formation of an epitaxial oxide thin film. With decreasin g laser energy density, the O-2 pressure required to grow epitaxial YSZ fil ms was shifted toward the lower region. Therefore, epitaxial growth of YSZ films could be achieved at a very low pressure of 2 x 10(-4) Pa compared wi th the known O-2 pressure region used for epitaxial growth, The roughness o f surfaces was very low, within 0.18-0.26 nm.