Stability and chemical composition of thermally grown iridium-oxide thin films

The effect of growth conditions on the thermal stability and chemical compo sition of iridium-oxide thin films fabricated by annealing Lr films in O-2 is presented. The oxide growth as a function of anneal temperature was stud ied by x-ray photoelectron spectroscopy depth profile analysis and the ther mal stability was determined using temperature programmed desorption spectr oscopy. We observed that with increasing anneal temperature, the surface ox idized to IrO2 (110) and the thermal stability of the resulting oxide incre ased. X-ray photoelectron spectroscopy depth profiles showed that IrO2 star ts to form at 600 degrees C simultaneous with an increase in the surface ro ughness of the film. (C) 2000 American Vacuum Society. [S0734-211X(00)02204 -6].