SELF AND IMPURITY-ION BEAM MIXING IN MOLECULAR-BEAM EPITAXY-GROWN GA(AL)AS AND CD(MN)TE STRUCTURES

Authors
BARCZ A REGINSKI K SADLO M KARCZEWSKI G KOSSUT J
Citation
A. Barcz et al., SELF AND IMPURITY-ION BEAM MIXING IN MOLECULAR-BEAM EPITAXY-GROWN GA(AL)AS AND CD(MN)TE STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 51-54
Citations number
13
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
51 - 54
Database
ISI
SICI code
0168-583X(1997)127:<51:SAIBMI>2.0.ZU;2-G
Abstract
The redistribution of thin markers due to ion irradiation was studied by secondary ion mass spectrometry (SIMS) in selected compound semicon ductors. It was found that, for marker species with infinite solubilit y in the matrix such as Al in GaAs, Ga in AlAs or Mn in CdTe, the resu ltant mixing efficiencies are much greater than those previously deter mined for Si and most metals. At low doses, the extent of mixing is su ppressed for tracer species with limited solubility such as delta-Be i n GaAs or delta-In in CdTe. The results strongly suggest the importanc e of thermo-dynamic forces in the irradiation-induced atomic rearrange ments.