Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors

We have studied cross-sectioned n- and p-metal-oxide-semiconductor field ef fect transistors with gate lengths approaching 60 nm using a scanning capac itance microscope (SCM). In a homogeneous semiconductor, the SCM measures t he depletion length, determining the dopant concentration. When imaging a r eal device there is an interaction between the probe tip and the built-in d epletion of the p-n junction. With the help of a device simulator, we can u nderstand the relation between the SCM images and the position of the p-n j unction, making the SCM a quantitative tool for junction delineation and di rect measurement of the electrical channel length. (C) 2000 American Vacuum Society. [S0734-211X(00)08604-2].