In-plane optical anisotropy of quantum well structures: From fundamental considerations to interface characterization and optoelectronic engineering

The recently discovered in-plane optical anisotropy of (001)-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotoinversion symmetry at a se miconductor heterointerface, with special attention to its dependence on ef fective parameters such as the valence band offset. The intracell localizat ion of Bloch functions is explained from simple theoretical arguments and e valuated numerically from a pseudopotential microscopic model. The role of envelope functions is then considered, and we discuss the specific case of no-common atom interfaces. Experimental results and applications to interfa ce characterization are presented, and the potential of the "quantum confin ed Pockels effect" for device applications is finally discussed. (C) 2000 A merican Vacuum Society. [S0734-211X(00)03804-X].