EVALUATION OF MICRO-DEFECTS BY DRAM DATA RETENTION CHARACTERISTICS MEASUREMENT

The influence of micro-defects induced intentionally by Si+ ion implan tation was investigated using data retention characteristics of dynami c random access memory (DRAM). The defect formation was controlled by Si+ implantation and subsequent annealing conditions. Micro-defects su ch as {311} defects having a size below 50 nm degraded the junction le akage current and data retention characteristics. Data retention chara cteristics was also affected by the existence of micro-defects such as point defect or its clusters, although the junction leakage current w as low enough compared with unimplanted samples.