Interface tuning of the InAs/AlSb heterostructure-based quantum wells

This work shows the importance of interface consideration at the barrier si des for quantum well (QW)-based semiconductor structures, on the example of the InAs/AlSb heterostructure. Various interface combinations of AlAs and InSb type have been included in an LnAs/AlSb double-barrier resonant-tunnel ing-diode structure, and the resulting transmission functions have been cal culated. A systematic comparison of the resulting structures with each othe r and also with the traditional case without interface consideration have b een made. Clear tendencies and relationships observed in the transmission c haracteristics of the different structures let the interface tuning emerge as a quality tool for QW-device tayloring. (C) 2000 American Vacuum Society . [S0734-211X(00)01404-9].