Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering (vol 18, pg 144, 2000)

Authors
Tanzer, TA Bohn, PW Roshchin, IV Greene, LH
Citation
Ta. Tanzer et al., Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering (vol 18, pg 144, 2000), J VAC SCI B, 18(4), 2000, pp. 2030-2030
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
4
Year of publication
2000
Pages
2030 - 2030
Database
ISI
SICI code
1071-1023(200007/08)18:4<2030:IPDOIS>2.0.ZU;2-B