SIMULATION OF CLUSTER IMPACTS ON SILICON SURFACE

Citation
Z. Insepov et al., SIMULATION OF CLUSTER IMPACTS ON SILICON SURFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 269-272
Citations number
13
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
269 - 272
Database
ISI
SICI code
0168-583X(1997)127:<269:SOCIOS>2.0.ZU;2-M
Abstract
A new hybrid model, combining Molecular Dynamics (MD) with continuum m echanics and thermodynamics, has been developed for studying collision s of energetic particles with a solid surface. MD describes interactio n of atoms in the central impact zone characterized by energetic atomi c collisions and non-equilibrium states of matter while the continuum model is applied to a much larger volume outside. Appropriate boundary conditions at the interface of the two regions prevent the appearance of unphysical shock wave reflections. The hybrid model is very effici ent in computations as it reduces the number of the system's degrees o f freedom by minimizing the size of the central MD zone. The model was applied to collisions of a few keV Ar clusters containing approximate ly 100 atoms with Si(100) surface. The results show that cluster impac ts create craters and local melting and that a number of displaced sur face atoms have large lateral velocities. The latter may explain the e xperimentally observed surface smoothing by cluster bombardment.