ION-BEAM-ASSISTED DEPOSITION OF THIN MOLYBDENUM FILMS STUDIED BY MOLECULAR-DYNAMICS SIMULATION

Authors
ROBBEMOND A THIJSSE BJ
Citation
A. Robbemond et Bj. Thijsse, ION-BEAM-ASSISTED DEPOSITION OF THIN MOLYBDENUM FILMS STUDIED BY MOLECULAR-DYNAMICS SIMULATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 273-277
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
273 - 277
Database
ISI
SICI code
0168-583X(1997)127:<273:IDOTMF>2.0.ZU;2-R
Abstract
We report results obtained by molecular dynamics simulation of low ene rgy ar on-ion assisted growth of thin molybdenum films (approximate to 20 Angstrom). The effects of a single ion impact are discussed, but m ore particularly we consider film growth from a manufacturing viewpoin t and examine the properties of the completed films. Results for ion-b eam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface orientation, atomic displace ments, surface roughness, sputtering, point defects, and the influence of off-normal atom incidence are discussed.