CHANNELED ION-BEAM SYNTHESIS OF ERBIUM SILICIDE - COMPARISON OF EXPERIMENTAL STUDIES AND BINARY COLLISION SIMULATIONS

It was recently shown that thin films of high-quality rare-earth (RE) silicides can be formed by high-dose implantation of RE-metals into Si under channeling conditions, whereas it is impossible to form continu ous RESi layers when using conventional non-channeled (7 degrees tilte d) implantation. This different behavior can be explained to a large e xtent by the differences in projected range, damage density and sputte ring yield between channeled and non-channeled implantation, as is sho wn by comparison of experimental results to model calculations of the initial implantation process using the binary collision code MARLOWE.