ION-BEAM SYNTHESIS OF SIC LAYERS IN SIMOX MATERIAL

100 keV high-dose carbon implantation into SIMOX layer structures foll owed by thermal annealing at 1250 degrees C has been used to synthesiz e buried epitaxial 3C-SiC layers, which are electrically insulated fro m the silicon substrate. The layer structures resulting from implantat ions at 400 and 600 degrees C are analyzed as a function of dose for t he as-implanted and the annealed state using Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. Th e synthesis of Si/SiC/SiO2/Si layer systems as well as the formation o f layer systems including a few nm thin and thermally stable c-Si inte rmediate layer between the SiC and the SiO2 layer is described. It is shown that carbon atoms can be incorporated into the oxide layer with concentrations up to at least 38 at.% and that this carbon is stable a gainst outdiffusion during annealing at 1250 degrees C.