DEFECT CHARACTERIZATION IN HIGH-TEMPERATURE IMPLANTED 6H-SIC USING TEM

Transmission Electron Microscopy (TEM) was used to investigate microst ructure of 6H-SiC implanted with aluminum ions at temperatures of 1400 -1600 degrees C after annealing at 1800 degrees C for 5 s. The formati on of aluminum precipitates (up to 40 nm in size) and stacking faults were found to be the main defects observed in a damage layer developed in BH-SIC when implanted at high temperatures. The atomic structure o f the defects were studied by high resolution electron microscopy (HRE M). It was established that aluminum precipitates have (111)(Al)//(000 1)6H-SiC; (110)(Al)//(<(2)over bar 110>)(6H-SiC) Orientation relations hips with the matrix. The stacking faults having ABCACBA BCB ACBABC st acking sequence were found to originate at the precipitate/matrix inte rface and terminate in the matrix by the formation of partial dislocat ions.