ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC) AND SOLID-PHASE EPITAXIAL-GROWTH (SPEG) OF SI1-XCX LAYERS IN SI FABRICATED BY C ION-IMPLANTATION

Amorphous S1-xCx layers in Si(100) (0.013 less than or equal to x less than or equal to 0.032 at peak concentration) formed by 35 keV C-12 i mplantation were crystallized by solid phase epitaxial growth (SPEG) u p to 850 degrees C and by ion-beam-induced epitaxial crystallization ( IBIEC) with 400 keV Ar or Ge ions at 300-400 degrees C. SPEG process h as induced the epitaxial growth up to the surface for samples with x l ess than or equal to 0.019 and IBIEC process has induced that for samp les with x less than or equal to 0.025, Rutherford backscattering spec trometry (RES) measurements have revealed a direct scattering peak due to extended defects around the depth of peak C concentration both in SPEG-grown samples (x = 0.019) and IBIEC-grown sample (x = 0.025), X-r ay diffraction (XRD) has shown a growth with smaller tensile strain in both SPEG- and IBIEC-grown samples than in fully strained layers. Pho toluminescence (PL) measurements at 2 K have shown a strong I-1 line e mission in IBIEC-grown samples, which can be attributed to vacancy clu stering. The local configuration of defects around C atoms in the IBIE C-grown samples is thought to be an origin of the smaller tensile stra in.