FLICKER NOISE IN ION-IMPLANTED SILICON STRUCTURES

Authors
MAKOVIYCHUK MI PARSHIN EO REKSHINSKII VA
Citation
Mi. Makoviychuk et al., FLICKER NOISE IN ION-IMPLANTED SILICON STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 414-417
Citations number
3
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
414 - 417
Database
ISI
SICI code
0168-583X(1997)127:<414:FNIISS>2.0.ZU;2-9
Abstract
The low-frequency noise spectra of ion-implanted silicon structures wi th various geometries are measured. The spectra exhibit thermal noise and f(-y) (flicker) noise exclusively. The flicker noise exhibits a st rong dependence on the technology parameters (implantation energy and dose, post-implantation anneal temperature). A discussion of the resul ts is given in terms of a volume effect. Noise measurements on implant ed layers, produced under carefully controlled conditions, show promis e as a tool to investigate flicker noise.