OPTICAL-CHANGES INDUCED IN GAAS ALGAAS WAVE-GUIDES BY MEV ION-BOMBARDMENT/

We have fabricated optical channel waveguides in selectively masked pl anar GaAs/AlGaAs waveguide structures using MeV carbon and oxygen ions without post annealing. The fabricated channel waveguides were charac terized exclusively by performing optical transmission measurements at a wavelength of 1.3 mu m Investigation of the extracted optical resul ts reveals that further optimization of the ion beam parameters is req uired to reduce the observed propagation loss values. The feasibility of this technique may provide a totally new concept of localized optic al modifications in the GaAs/AlGaAs system.