DISTRIBUTION OF IMPURITIES IMPLANTED IN INSB AND INAS BEFORE AND AFTER ANNEALING

Experimental estimation of distributions of implanted ions was done fo r Be+, Mg+ and S+. Energies of ions were up to 250 keV and doses up to 10(15) cm(-2). Experimental distributions were measured by the use of ion microprobe MIQ-256 (CAMECA/Riber). Simulation of impurity and def ect distributions for 10000 ions of each species was carried out by us ing TRIM-93 code. It was found that mean ranges R-p of experimental an d calculated distributions were very similar. Range stragglings Delta R-p of experimental distributions exceeded the calculated ones for all species. The difference between the range stragglings of experimental and calculated distributions was up to 35%. It was found that after 5 50 degrees C post-implantation annealing of sulphur implanted layers t hen was no broadening of ion implanted distributions. It is believed t hat sulphur in the implantation process, interacting with defects, too k places in As sublattice sites and even annealing did not change sulp hur state in InAs and motion was not observed.