INVESTIGATION OF THE ANNEALING BEHAVIOR OF DAMAGE IN SI IMPLANTED INPBY PHOTOACOUSTIC AND RAMAN-SPECTROSCOPY

The annealing behavior of damage in InP implanted with 200 keV Si ions at doses of 10(12)-10(16) ions/cm(2) was investigated by photoacousti c spectroscopy (PAS) using a microphone as a detector and Raman spectr oscopy, Band tails were observed in the photoacoustic (PA) spectra of implanted samples at energies lower than the bandgap energy, The PA in tensity at the band tails increased with increasing implantation dose and reached a critical value at a dose of 10(14) ions/cm(2) indicating that the implanted layers were completely amorphized, The isochronal( 15 min) annealing curves of the PA intensity for the amorphized sample s can be classified into four temperature regions: region I below 200 degrees C, region II at 200-300 degrees C, region III at 300-600 degre es C and region IV above 600 degrees C, The results of PA and Raman me asurements indicated that the implanted layers were in an amorphous st ate in region I, the implanted layers transformed from an amorphous st ate to a mono-crystalline state including complicated defects in regio n II, the defects decreased slightly in region III and defects with th e dissociation of phosphorus from the sample surface were generated in region IV.