Gp. Choi et al., Time dependence of electrical properties of SrBi2Ta2O9 thin films after top electrode annealing, MATER LETT, 45(3-4), 2000, pp. 208-212
The time dependence of electrical properties of SrBi2Ta2O9 (SBT) thin films
after top electrode annealing was studied. The high leakage current densit
y was measured immediately after the top electrode annealing but leakage cu
rrent characteristics were improved with increasing time. In C-F characteri
stics, the low frequency dielectric dispersion was also observed and the di
spersion frequency moved to low frequency due to the increase of the interf
ace resistance. The time dependence of electrical properties can be explain
ed to be due to the gradual decrease of the conductivity of (semi)conductin
g paths. The conducting path may be formed by the diffusion of metallic Bi
and the reduction of Bi oxide during the top electrode annealing and its co
nductivity may be decreased due to the interaction of metallic Bi with oxyg
en atoms after the stabilization. (C) 2000 Elsevier Science B.V. All rights
reserved.