Ab initio molecular dynamics simulation for the insertion process of Si and Ca atoms into C-74

Citation
K. Shiga et al., Ab initio molecular dynamics simulation for the insertion process of Si and Ca atoms into C-74, MAT SCI E A, 290(1-2), 2000, pp. 6-10
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
290
Issue
1-2
Year of publication
2000
Pages
6 - 10
Database
ISI
SICI code
0921-5093(20001015)290:1-2<6:AIMDSF>2.0.ZU;2-0
Abstract
A large-scale ab initio molecular dynamics simulation for the insertion pro cess of silicon and calcium atoms into C-74 is carried out for the first ti me by using the all-electron mixed-basis approach, where a one-electron wav e function is expressed by superposing plant waves and numerical atomic orb itals. The present numerical results show that a silicon atom with more tha n a 40 eV kinetic energy can be inserted into C-74 through the center of a six-membered ring with a very short relaxation time of about 40 fs, and a c alcium atom can be inserted with a 120 eV kinetic energy with a rather long relaxation time (> 540 fs). (C) 2000 Elsevier Science S.A. All rights rese rved.