Growth and emission properties of beta-SiC nanorods

A one step procedure has been developed to grow beta-silicon carbide (beta- SiC) nanorods from a solid carbon and silicon source on silicon substrates using a hot filament chemical vapor deposition. The growth process was cata lyzed by the impurities of metallic particles confined in the solid source plate made of a mixture of graphite and silicon powders pressed at 150 degr ees C. Hydrogen was introduced into a reaction chamber to react with the so lid source. The resulting process produced, hydrocarbon and hydrosilicon ra dicals, which subsequently reacted on the Si substrate surface and presumab ly formed SiC nanorods. The nanorods consisted of a crystalline beta-SiC co re with an amorphous silicon oxide shell layer. The nanorods were 10-30 nm in diameter and less than 1 mu m in length. Field emission characteristics of the beta-SiC nanorods were investigated using current-voltage measuremen ts and the Fowler-Nordheim equation. The silicon carbide nanorods exhibited high electron field emission with high stability. Along with the ease of p reparation, these silicon carbide nanorods are believed to have potential a pplication in electron field emitting devices. (C) 2000 Elsevier Science S. A. All rights reserved.