Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes

Synthesis of highly ordered nanostructures of single crystalline GaN nanowi res in anodic alumina membranes was achieved through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1000 degrees C in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, X-ray di ffraction, Raman backscattering spectrum. scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure c onsists of the single crystalline hexagonal wurtzite GaN nanowires with abo ut 20 nm in diameter and 40 similar to 50 mu m in length in the uniform nan ochannels of the anodic alumina membrane. The vapor-liquid-solid (VLS) grow th mechanism of the ordered nanostructure was discussed in detail. (C) 2000 Elsevier Science S.A. All rights reserved.