EXCITATION MECHANISMS OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OFER3-IMPLANTED SI( IN ER)

Er-implanted p(+)-n Si diode was fabricated and characterized by photo - (PL) and electroluminescence (EL) measurements. A weak EL from Er3was observed at 1538 nm together with the strong free exciton (FE) emi ssions at 1090 nm and 1130 nm under forward bias, whereas the noisy FE emissions were detected and no noticeable Els from Er3+ were identifi ed under reverse bias. On the other hands, in PL measurements, a sharp PL signal from Er3+ was clearly observed at 1538 nm, its PL spectral feature being similar to that of EL from Er3+ under forward bias. Our present results suggest that the excitation of Er3+ is achieved throug h the recombination of electron-hole pairs generated in Si under forwa rd bias.