INFLUENCE OF IMPURITIES (NITROGEN, OXYGEN) ON ER-RELATED EMISSION IN GALLIUM-PHOSPHIDE

Erbium (Er) was co-implanted with nitrogen (N) or oxygen (O) into gall ium phosphide (GaP). Compared with GaP:Er sample, the Er3+-related 1.5 4 mu m photoluminescence (PL) intensity from GaP:Er doped with N was e nhanced approximately six times stronger, while no noticeable enhancem ent was observed for specimens with O, The PL spectral features of GaP :Er, N or O were shown to be different from these of GaP:Er. We believ e that these differences in the Er-related luminescence are due to the formation of optically radiative complexes composed of Er and impurit y atoms. As compared with O, it is found that N is better impurity whi ch give rise to more efficient energy-transfer to Er3+ ion.