ION-BEAM MIXING OF METAL-INSULATOR MULTILAYERS - A PROMISING TECHNIQUE FOR THE FORMATION OF METALLIC NANOPHASES

The presence of metallic nanoclusters in an insulating matrix leads to non-linear optical properties with potential applications in optoelec tronics. Ion implantation is currently used to produce such a composit e material with limitations inherent to the implantation process, part icularly concerning the doped thickness and the homogeneity of the tra nsformed layer. Here we show that high-energy ion-beam mixing can be a pplied as an alternative ion beam technique to form metallic nanoclust ers without the drawbacks of direct ion implantation. Thin SiO2-metal multilayers were irradiated at room temperature with MeV heavy ions in order to produce an homogeneous SiO2 layer containing metallic nanocl usters over the whole sample thickness. The present works deals with t he mechanism lending to the formation of metallic nanophases by ion-be am mixing.