ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING

A dose of 1.6 x 10(17) cm(-2) Si+ ions was implanted in 500-nm-thick S iO2 layers with subsequent transient annealing at different temperatur es. After the highest temperatures light-emitting Si nanoclusters were found that were formed in SiO2. Then all the lavers were subjected to isochronal (30 min) furnace anneals and their properties were control led by room temperature photoluminescence (PL) and Raman spectroscopy, The PL intensity from Si nanocrystal-containing layers progressively decreased with an increase in the anneal temperature (T-a) up to 800-9 00 degrees C, but rapidly arose again in the T-a range of 1000-1150 de grees C. Raman scattering has shown that Si nanocrystals vanish at T-a similar to 800 degrees C and that the amorphous silicon signal reappe ars. When the initial transient annealing failed to form Si nanocrysta ls, the furnace heat treatment at T-a< 700 degrees C gave rise in PL i ntensity followed by its drop at T-a similar to 800-900 degrees C and a strong increase at T-a similar to 1000-1150 degrees C. The disappear ance of Si nanocrystals and PL is considered to result from low stabil ity of the smallest crystallites quenched in SiO2 by transient process ing. When Si nanocrystals were not induced by transient preheating, th e increase in T-a supposedly led to percolation-like formation of Si i nclusions, their transformation to amorphous Si phase nanoprecipitates and, finally, to Si nanocrystals. For all the samples the formation o f nanocrystals at T-a=1000-1150 degrees C was provided by the increase in their stability due to diffusion-limited grain growth. The results obtained are considered to support the idea of quantum-confined origi n of FL.