ION-IMPLANTATION IN 6H-SIC

Authors
RAO MV NORDSTROM D GARDNER JA EDWARDS A ROTH EG KELNER G RIDGWAY M
Citation
Mv. Rao et al., ION-IMPLANTATION IN 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 655-659
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
655 - 659
Database
ISI
SICI code
0168-583X(1997)127:<655:II6>2.0.ZU;2-D
Abstract
In this study we have performed N, P, Al, B, V, Si, and C implantation s to obtain p-type, n-type, and semi-insulating regions in 6H-SiC crys tals. Post-implantation annealings were performed in either a conventi onal ceramic processing furnace or using microwaves in the temperature range of 1200-1700 degrees C, The material was characterized by secon dary ion mass spectrometry, Hall, Rutherford backscattering via channe ling, and two-probe I-V measurements. N-type regions with a maximum ro om temperature electron concentration of 2 x 10(19) cm(-3) were obtain ed using N and P implantations, Though p-type regions were obtained by Al and B, the room temperature hole concentrations were low due to th e deep acceptor levels associated with these impurities. The Si and C bombardment gave regions with resistivities as high as 10(9) Omega cm compared to 1 Omega cm in the starting material.