T. Fujihana et al., CRYSTAL-STRUCTURE OF CARBON-IMPLANTED TITANIUM, VANADIUM AND CHROMIUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 660-663
The dose dependence on crystal structures and lattice parameters of ca
rbon-implanted layers of polycrystalline titanium, vanadium and chromi
um plates has been investigated by X-ray diffraction (XRD) measurement
s. Implantations of C-12(+)-ions were performed at doses between 1 x 1
0(17) and 2 x 10(18) ions/cm(2) at 100 keV, and at room temperature. T
he formation of titanium carbide is characterized only in the B1(NaCl)
-type structure in the entire implant dose range, and its lattice para
meter mostly agrees with that of monocarbide TiC at higher doses. For
vanadium, the B1-type carbide grows preferentially with the dose incre
ment. Its lattice parameter suggests the formation of nearly monocarbi
de V4C3 at the highest dose. For chromium, only a cubic carbide peculi
ar to carbon implantation, of which the lattice of chromium atoms is f
ee having lattice parameter equal to the diagonal line segment size of
the bce lattice, is found to crystallize at doses over 5 x 10(17) ion
s/cm(2). Carbides of titanium and vanadium formed by carbon implantati
on correspond to those expected by a standard equilibrium with the sys
tem of carbon and the respective metal. The formation process of a par
ticular phase will be discussed for chromium carbide.