ANNEALING STUDIES OF CHROMIUM-IMPLANTED SILICON-NITRIDE CERAMICS

Authors
BRENSCHEIDT F MATZ W WIESER E MOLLER W
Citation
F. Brenscheidt et al., ANNEALING STUDIES OF CHROMIUM-IMPLANTED SILICON-NITRIDE CERAMICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 677-680
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
677 - 680
Database
ISI
SICI code
0168-583X(1997)127:<677:ASOCSC>2.0.ZU;2-#
Abstract
The effect of chromium implantation and subsequent annealing on the ha rdness and wear behaviour of a silicon nitride-based ceramic is invest igated. Implantation energies were 200, 400, 1000 and 2000 keV, the fl uence was 10(17) Cr2+ ions cm(-2) in all cases. The annealing temperat ures were 800 degrees C, 1000 degrees C and 1200 degrees C. The phase composition was determined with X-ray diffraction. Annealing at 800 de grees C does not affect the crystal structure. At 1000 degrees C the a lpha-Si3N4-phase is formed for 1 and 2 MeV implantation energy. At 120 0 degrees C, Cristobalite and Keiviite an formed at the lower implanta tion energies; at higher energies alpha-Si3N4 is formed. We discuss th e phase formation for the different implantation energies and annealin g temperatures and the relationship with the observed hardness and wea r.