A study on dielectric properties of a new polyimide film suitable for interlayer dielectric material in microelectronics applications

Interlayer dielectric film formation under Al wirings for VLSI and ULSI dev ices requires low temperature processing and high surface planarization cap ability, Polymers as a dielectric material play a significant role in achie ving the current state-of-the art in microelectronics. In this work, the di electric properties of a new polyimide material suitable for microelectroni cs applications have been investigated. The polyimide was synthesized follo wing the synthesis of 4,4'-bis(3-aminophenoxy)diphenyl sulfone (DAPDS), by nucleophilic aromatic substitution of 4,4'-dichlorodiphenyl sulfone with m- aminophenol, DAPDS/pyromellitic dianhydride (PMDA). Using this specific pol yimide, a metal-polyimide-silicon (MIS) structure was manufactured to demon strate the dielectric properties of the material. The properties of the MIS capacitance have been examined by deriving an electrical model of the MIS structure. (C) 2000 Published by Elsevier Science Ltd.