A. Kuntman et H. Kuntman, A study on dielectric properties of a new polyimide film suitable for interlayer dielectric material in microelectronics applications, MICROELEC J, 31(8), 2000, pp. 629-634
Interlayer dielectric film formation under Al wirings for VLSI and ULSI dev
ices requires low temperature processing and high surface planarization cap
ability, Polymers as a dielectric material play a significant role in achie
ving the current state-of-the art in microelectronics. In this work, the di
electric properties of a new polyimide material suitable for microelectroni
cs applications have been investigated. The polyimide was synthesized follo
wing the synthesis of 4,4'-bis(3-aminophenoxy)diphenyl sulfone (DAPDS), by
nucleophilic aromatic substitution of 4,4'-dichlorodiphenyl sulfone with m-
aminophenol, DAPDS/pyromellitic dianhydride (PMDA). Using this specific pol
yimide, a metal-polyimide-silicon (MIS) structure was manufactured to demon
strate the dielectric properties of the material. The properties of the MIS
capacitance have been examined by deriving an electrical model of the MIS
structure. (C) 2000 Published by Elsevier Science Ltd.