Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures

Authors
Koukab, A Bath, A Thevenin, P
Citation
A. Koukab et al., Improved bias-thermal-stress method for the insulator charge measurement of BN/InP MIS structures, MICROELEC J, 31(8), 2000, pp. 647-651
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
31
Issue
8
Year of publication
2000
Pages
647 - 651
Database
ISI
SICI code
0026-2692(200008)31:8<647:IBMFTI>2.0.ZU;2-U
Abstract
A modified bias-thermal-stress method for insulator charge characterisation is described. The procedure is applied to optimise the deposition paramete rs of a boron-nitride (BN) insulator on an indium phosphide (InP) semicondu ctor. The deposition of the BN films is performed at low temperatures using a microwave plasma enhanced CVD system. A complete characterisation of bot h mobile and fixed charges in the BN films is performed and the methodology to verify the results is illustrated. (C) 2000 Elsevier Science Ltd. All r ights reserved.