Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides

Time-to-breakdown (t(bd)) of polysilicon/polyoxide/polysilicon structures i s investigated on small and large area capacitors. The ln(t(bd)) versus 1/E -ox projection lines are corrected by using an average oxide field enhancem ent factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G approximate to 320 MV/cm in the time-to-breakdown pr ojection line is obtained. It is shown that the fast prediction of time-to- breakdown can be achieved with short stress time measurements in structures of different area. (C) 2000 Elsevier Science Ltd. All rights reserved.