Citation
Sy. Han et al., Surface field distribution and breakdown voltage of RESURF LDMOSFETs, MICROELEC J, 31(8), 2000, pp. 685-688
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692
→ ACNP
Volume
31
Issue
8
Year of publication
2000
Pages
685 - 688
Database
ISI
SICI code
0026-2692(200008)31:8<685:SFDABV>2.0.ZU;2-1
Abstract
An approximate but analytical expression for the surface held distribution
of RESURF LDMOSFETs is presented in terms of the device parameters and the
applied drain voltage, which allows calculation of the breakdown voltage vi
a the surface field as a function of the epitaxial layer length. Analytical
results are in fair agreement with numerical simulations as well as experi
mental results reported. (C) 2000 Published by Elsevier Science Ltd.