MICROSCOPIC STUDIES OF IMPLANTED AS-73 IN DIAMOND

In this work we present results on the lattice location and the micros copic surroundings of As implanted into diamond. A mixture of the isob ars Se-73 and As-73 was implanted to a dose of 1.0 x 10(14) at/cm(2) w ith 60-keV energy, Complementary gamma-e(-) Perturbed Angular Correlat ions (PAC), Emission Channeling (EC) and RBS/channeling (RBS/C) measur ements were performed for the same sample, after full decay of Se-73 t o As-73. After annealing at 1400 K the EC and RBS/C spectra show that more than 50% of the As nuclei reside in substitutional positions, alt hough some residual damage is still seen within the implanted range. O n the other hand, the PAC data show that significant annealing of the lattice damage occurred only in the vicinity of 30% of the implanted A s atoms, and that these have remaining defects in their neighborhood.