INTERFACIAL STRUCTURE CONTROL OF CUBIC BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION

Citation
Y. Setsuhara et al., INTERFACIAL STRUCTURE CONTROL OF CUBIC BORON-NITRIDE FILMS PREPARED BY ION-BEAM-ASSISTED DEPOSITION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 851-856
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
127
Year of publication
1997
Pages
851 - 856
Database
ISI
SICI code
0168-583X(1997)127:<851:ISCOCB>2.0.ZU;2-X
Abstract
Boron nitride films were prepared by ion beam assisted deposition (IBA D). The films were synthesized by depositing boron vapor under simulta neous bombardment with nitrogen ions and nitrogen-argon mixture ions. Cubic boron nitride (c-BN) films with enhanced tribological properties had been explored by inserting a B-rich layer as a controlled buffer at the interface. Tribological characterizations of the buffer layer a nd the double-layered BN films consisting of the c-BN layer underneath with the B-rich buffer layer have been performed. Successful growth o f c-BN layer has been observed on the B-rich layer and the hardness of the films increased almost linearly with increasing fraction of the s p(3) bonded cubic phase in the c-BN layer, The control of the interfac ial structure exhibited a significant effect on the improvement of the tribological properties of the films due to the effective relaxation of internal stress of the c-BN films.